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08 de Diciembre, 2011 · General

Carbon nanotubes and nano-devices electrical characteristics of low-power analysis techniques

now, the potential use of carbon nanotubes is endless, only in the semiconductor industry there are a lot of potential applications. Researchers have successfully used carbon nanotube FET switches, consumer electronics, memory, and the next generation of field emission display televisions. The researchers also try to use carbon nanotubes in sensors to detect molecules in the particles,cool schoolbags to support the application of certain national security class. In addition, there are still efforts to explore the use of carbon nanotubes in the digital logic.

for low-power carbon nanotubes and other nano-devices, semiconductors and nanotechnology research in people has been facing many challenges. One challenge is that, regardless of the current generation of semiconductor devices or electronic devices for next generation nano, the tiny unit electrical characteristics of the circuit is very difficult. The second major challenge is to limit power consumption becomes critical when, how the next generation of nano-device characterization. As device feature sizes shrink and components to the nanometer level, the researchers had to limit the signal strength for the characterization.

Finally, the detection of nano-devices is always a challenge. As the transistor feature size of less than 90nm gate size and spacing shrinking, most of the detection system to detect the smallest dot size has remained at about 50 microns. This limitation led to a large extent, moving the probe tip size and inaccurate. Must move with nanoscale precision and accuracy than current detection 1pA new tools (Figure 1) in order to solve this problem.

This article will focus on carbon nanotubes, low-power device characterization measurement techniques, and ways to overcome a variety of measurement errors.

methods and techniques

consumers tend to faster, more powerful, more compact size of electronic products. As electronic products have to do a smaller size, and therefore, the power consumption of components is limited. Thus, when the electrical characteristics of these components analysis, test signals must be weak, to prevent the component breakdown or cause other damage.

When the nano-device current - voltage (IV) characteristics of the analysis, the need to control the use of very small current consumption or reduce the Joule heating effect, cosmetic bag it is necessary to measure the small voltages. Therefore, both for the analysis of the device IV characteristics, or non-conductive material and components of resistance measurement, low-voltage measurement techniques are essential. For the electronics industry, researchers and test engineers, this restriction increases the power of advanced devices and next-generation devices and materials characterization challenges.

with conventional micron-size components and materials, and the IV curve generation different is that for the measurement of carbon nanotubes and nano-devices require special skills and techniques. Following the usual analysis of IV curves, usually two electric measurements. Problem with this approach is that the measured voltage contains not only the voltage on the device under test, but also package

point of contact with test leads and the voltage. If you want to measure the resistance of a device, then when the resistance is greater than a few ohms, when the ordinary ohmmeter to measure resistance usually does not cause the introduction of the problem. However, if you want to measure the conductivity of the nano-material or component on the low resistance, the use of two measurements it is difficult to obtain accurate results. If the IV characterization or involved in low-voltage resistance measurement or low resistance, for example, molecular wires, semiconductor nanowires and carbon nanotubes, it is best to use based on the four-wire probe sets (ie, Kelvin) measurements, can be more accurate results.

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